IRG7PH30K10PBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
10 μS short Circuit SOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) Temperature Co-Efficient
Tight Parameter Distribution
Lead-Free Package
IRG7PH30K10PBF Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
