HGT1S14N36G3VLS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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HGT1S14N36G3VLS Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Logic
Power - Max
100W
Voltage - Collector Emitter Breakdown (Max)
390V
Current - Collector (Ic) (Max)
18A
Test Condition
300V, 7A, 25Ohm, 5V
Vce(on) (Max) @ Vge, Ic
2.2V @ 5V, 14A
Gate Charge
24nC
Td (on/off) @ 25°C
-/7μs
In-Stock:1642 items
HGT1S14N36G3VLS Product Details
HGT1S14N36G3VLS Description
The HGT1S14N36G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.
HGT1S14N36G3VLS Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
TJ = 175 ℃
Ignition Energy Capable
HGT1S14N36G3VLS Applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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