HGT1S10N120BNST

HGT1S10N120BNST Description

HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The HGT1S10N120BNST IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require low conduction losses, such as UPS, solar inverters, motor control, and power supply.

HGT1S10N120BNST Features

• 17A, 1200V, TC = 110°C

• Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A

• Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

HGT1S10N120BNST Applications

• Uninterruptible Power Supply

• High Voltage, the high current switching device

• Induction Heating

• Converters or Inverter circuits