HGT1S10N120BNS Description
HGT1S10N120BNS IGBT is a MOS-gated switcher that operates at high voltage that blends the most effective characteristics of MOSFETs with bipolar transistors. ON Semiconductor HGT1S10N120BNS features the high impedance at the input of a MOSFET and the reduced on-state conduction loss that is typical of the bipolar transistor. HGT1S10N120BNS circuit is ideal for various high voltage switching applications that operate at moderate frequencies, for instance, UPS, solar inverter, motor control, and power supplies.
HGT1S10N120BNS Features
Typical Fall Time
17A, 1200V, TC = 110°C
Short Circuit Rating
Low Saturation Voltage
Low Conduction Loss
HGT1S10N120BNS Applications
UPS
Solar inverter
Motor control
Power supplies
