HGTP20N60A4

HGTP20N60A4 Description

The HGTG20N60A4 and HGTP20N60A4 are two variants of the same gene. The best features of a MOSFET with a high input impedance and the A bipolar transistor with a low on-state conduction loss. Many high-voltage switching applications benefit from IGBTs. high-frequency operation with low conduction losses is necessary. This device has been designed to be quick. UPS, welder, and induction applications are examples of switching applications. heating.

HGTP20N60A4 Features

• Low Conduction Loss

• 40 A, 600 V @ TC = 110°C

• Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 20 A

• Typical Fall Time............55ns at TJ = 125°C

HGTP20N60A4 Applications

• UPS

• Welder

• Other industries

• Fash switching application