FQPF9N25 Description
Fairchild's unique planar stripe DMOS technology is used to make these N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high energy pulses. These devices are ideal for switching DC/DC converters with high efficiency and switch mode power supplies.
FQPF9N25 Features
RDS(on) = 0.42Q @VGS =10V @6.7A, 250V
a low gate fee (typical 15.5 nC)
Extremely Low Crss (typical 15 pF)
Quick swapping
Avalanche-proofed to the nth degree
Dv/dt capability has been improved.
FQPF9N25 Applications
Switching applications
