Name: IRLR8729PBF
Brand: Infineon Technologies
SKU: IRLR8729PBF
Availability: InStock

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IRLR8729PBF

Manufacturer part number:IRLR8729PBF

Manufacturer:Infineon Technologies

Description:IRLR8729PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR8729PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	8.9MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	55W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	55W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 15V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Rise Time	47ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	58A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	260A
Avalanche Energy Rating (Eas)	74 mJ
Recovery Time	24 ns
Nominal Vgs	1.8 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRLR8729PBF Product Details

IRLR8729PBF Description

IRLR8729PBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. It is able to provide extremely low RDS (on), ultra-low gate impedance, and fully characterized avalanche voltage and current. All of these enable the power MOSFET IRLR8729PBF to be efficient and reliable in various applications.

IRLR8729PBF Features

Extremely low RDS (on)
Ultra-low gate impedance
Available in the D-Pak package
Full characterized avalanche voltage and current

IRLR8729PBF Applications

High-frequency synchronous buck converters for computer processor power
High-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use