Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FQPF55N10

FQPF55N10

FQPF55N10

ON Semiconductor

MOSFET N-CH 100V 34.2A TO-220F

SOT-23

FQPF55N10 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34.2A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
In-Stock:1057 items

About FQPF55N10

The FQPF55N10 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 34.2A TO-220F.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQPF55N10, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News