BSZ165N04NSGATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 840pF @ 20V maximal input capacitance.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8.9A.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 6.8 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.With 40V power, it supports a dual voltage supply of up to maximum.By using drive voltage (10V), this device helps reduce its overall power consumption.
BSZ165N04NSGATMA1 Features
the avalanche energy rating (Eas) is 5 mJ
a continuous drain current (ID) of 8.9A
the turn-off delay time is 6.8 ns
BSZ165N04NSGATMA1 Applications
There are a lot of Infineon Technologies BSZ165N04NSGATMA1 applications of single MOSFETs transistors.
- Server power supplies
- DC-to-DC converters
- Uninterruptible Power Supply
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supples
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Industrial Power Supplies
- Load switching
- PFC stages, hard switching PWM stages and resonant switching
- Solar Inverter
