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TK40E10K3,S1X(S

TK40E10K3,S1X(S

TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220AB

SOT-23

TK40E10K3,S1X(S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
PackagingTube
Published 2009
Series U-MOSIV
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation147W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation147W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 40A
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:3177 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$1.54000$77

About TK40E10K3,S1X(S

The TK40E10K3,S1X(S from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 40A TO-220AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TK40E10K3,S1X(S, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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