FQPF17N40 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQPF17N40 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
400V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
16A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
56W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
56W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 4.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.5A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
185ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
105 ns
Turn-Off Delay Time
90 ns
Continuous Drain Current (ID)
9.5A
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.27Ohm
Drain to Source Breakdown Voltage
400V
Avalanche Energy Rating (Eas)
1000 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3587 items
FQPF17N40 Product Details
FQPF17N40 Description
The FQPF17N40 N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
