Name: FDP8878
Brand: ON Semiconductor
SKU: FDP8878
Availability: InStock

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FDP8878

Manufacturer part number:FDP8878

Manufacturer:ON Semiconductor

Description:FDP8878 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP8878 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	1.8g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	40.5W Tc
Element Configuration	Single
Power Dissipation	40.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1235pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	244ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	35.3 ns
Turn-Off Delay Time	14.8 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FDP8878 Product Details

FDP8878 Description

This N-channel MOSFET is specifically designed to improve the overall efficiency of DC/DC converters using the following technologies synchronous or conventional switching PWM controllers. It has been optimized for low gate characteristics (conduction) and fast switching speed.