FQPF12N60CT Description
These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.
FQPF12N60CT Features
? 12 A, 600 V, RDS(on) = 650 m? (Max.) @ VGS = 10 V,
ID = 6 A
? Low Gate Charge (Typ. 48 nC)
? Low Crss (Typ. 21 pF)
? 100% Avalanche Tested
FQPF12N60CT Applications
efficient switching mode power supplies
active power factor correction
electronic lamp ballasts
