IRF840B Description
These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are ideal for half-bridge-based efficient switching mode power supplies, power factor correction and electronic lamp ballasts.
IRF840B Features
8.0A, 500V, RDS(on) = 0.8? @VGS = 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
IRF840B Applications
half-bridge-based efficient switching mode power supplies
power factor correction
electronic lamp ballasts
