Name: FQP9N50C
Brand: ON Semiconductor
SKU: FQP9N50C
Availability: InStock

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FQP9N50C

Manufacturer part number:FQP9N50C

Manufacturer:ON Semiconductor

Description:FQP9N50C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP9N50C Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	9A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	135W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	135W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	65ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	64 ns
Turn-Off Delay Time	93 ns
Continuous Drain Current (ID)	9A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	500V
Dual Supply Voltage	500V
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FQP9N50C Product Details

FQP9N50C Description

These N-Channel enhancement mode power fieldeffect transistors FQP9N50C are produced using Fairchildsproprietary planarstnpe. DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance. provide supenorswitching berormance. and withstand high energypulse in the avalanche and commutaton mode.These ceces are well suitedforhigh efficiency switched made power supplies, active power factor correctionand electronic lamp ballasts based onhalf bridge topology.