IRF1010EZ Description
The IRF1010EZPBF is a HEXFET? N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make the IRF1010EZPBF an extremely efficient and reliable device for use in a wide variety of applications.
IRF1010EZ Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-free
IRF1010EZ Applications