FQP70N08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP70N08 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
155W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
17mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
70A Tc
Gate Charge (Qg) (Max) @ Vgs
98nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
In-Stock:7275 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.12000
$1.12
500
$1.1088
$554.4
1000
$1.0976
$1097.6
1500
$1.0864
$1629.6
2000
$1.0752
$2150.4
2500
$1.064
$2660
FQP70N08 Product Details
FQP70N08 Description
The FQP70N08 N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
