FDT439N Description
Onsemi's patented, high cell density, DMOS technology is used to make the FDT439N channel enhancement mode power field-effect transistor. This extremely high-density technique has been specifically designed to reduce on-state resistance and improve switching performance. The FDT439N is ideal for low voltage, low current applications such as laptop computer power management, battery-powered circuits, and DC motor control.
FDT439N Features
Fast switching speed.
This Device is Pb?Free
6.3 A, 30 V
RDS(on) = 0.045 @ VGS = 4.5 V
RDS(on) = 0.058 @ VGS = 2.5 V
FDT439N Applications
Load Switch
Motor Driving
DC/DC Converter
