FQP6N90 Description
These planar stripe, DMOS N-Channel enhancement mode power field effect transistors are a Fairchild-exclusive device.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. High efficiency switch mode power supplies work well with these devices.
FQP6N90 Features
5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
Low gate charge (typical 40 nC)
Low Crss ( typical 17 pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
FQP6N90 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
