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TK50E06K3A,S1X(S

TK50E06K3A,S1X(S

TK50E06K3A,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 50A TO-220AB

SOT-23

TK50E06K3A,S1X(S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
PackagingTube
Published 2009
Series U-MOSIV
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation104W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation104W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 50A
Rds On Max 8.5 mΩ
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:2140 items

About TK50E06K3A,S1X(S

The TK50E06K3A,S1X(S from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 50A TO-220AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TK50E06K3A,S1X(S, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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