Name: FQP630TSTU
Brand: ON Semiconductor
SKU: FQP630TSTU
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	78W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V

FQP630TSTU Product Details

FQP630TSTU Description

FQP630TSTU is a type of QFET? N-channel enhancement-mode MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. Based on this technology, it is able to provide low on-state resistance, fast switching speed, and withstand high energy pulse in the avalanche and commutation mode. As a result, FQP630TSTU is capable of providing considerable benefits for motor control, high-efficiency switching DC/DC converters, DC-AC converters for uninterrupted power supply, and switch-mode power supply.