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IPD70N04S3-07

IPD70N04S3-07

IPD70N04S3-07

Infineon Technologies

MOSFET N-CH 40V 82A TO252-3

SOT-23

IPD70N04S3-07 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2007
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureULTRA LOW RESISTANCE
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 79W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation79W
Case Connection DRAIN
Turn On Delay Time13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 82A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage40V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 145 mJ
Height 2.3mm
Length 6.5mm
Width 6.22mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1598 items

About IPD70N04S3-07

The IPD70N04S3-07 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 40V 82A TO252-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD70N04S3-07, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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