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FQP3N60

FQP3N60

FQP3N60

ON Semiconductor

FQP3N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP3N60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating3A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 75W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation75W
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 600V
Height 9.4mm
Length 10.67mm
Width 4.83mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:14026 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.59000$0.59
500$0.5841$292.05
1000$0.5782$578.2
1500$0.5723$858.45
2000$0.5664$1132.8
2500$0.5605$1401.25

FQP3N60 Product Details

FQP3N60 Description

FQP3N60 N-Channel power MOSFET is to be used in a variety of applications. FQP3N60 MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. FQP3N60 ON Semiconductor is widely used in switched-mode power supplies, active power factor correction, and electronic lamp ballasts.

FQP3N60 Features

Low gate charge

3A, 600V, RDS(on) = 3.4Ω(Max.) @VGS = 10 V, ID = 1.5A

100% avalanche tested

Low Crss

FQP3N60 Applications

Lamp ballasts

Other Industrial

Switch

DC-DC converter

High-voltage applications


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