Welcome to Hotenda.com Online Store!

logo
userjoin
Home

CSD19532Q5B

  • CSD19532Q5B - CSD19532Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
  • CSD19532Q5B - CSD19532Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

CSD19532Q5B

CSD19532Q5B

Texas Instruments

CSD19532Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD19532Q5B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19532
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 195W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3.1W
Case Connection DRAIN
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time6ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.6V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 274 mJ
Max Junction Temperature (Tj) 150°C
Height 1.05mm
Length 5mm
Width 6mm
Thickness 950μm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:3137 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.202967$0.202967
10$0.191478$1.91478
100$0.180640$18.064
500$0.170415$85.2075
1000$0.160769$160.769

CSD19532Q5B Product Details

CSD19532Q5B Description


The NexFETTMpower MOSFET CSD19532Q5B with 100 V, 4 m, SON 5-mm 6-mm is designed to minimize losses in power conversion applications.



CSD19532Q5B Features


  • RoHS Compliant

  • Halogen Free

  • SON 5-mm × 6-mm Plastic Package

  • Low Qg and Qgd

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb-Free Terminal Plating



CSD19532Q5B Applications


  • Motor Control

  • Synchronous Rectifier for Offline and Isolated DC-DC Converters


Related Products

Similar Transistors - FETs, MOSFETs - Single from Texas Instruments and other manufacturers

SPI15N65C3XKSA1 - MOSFET N-CH 650V 15A TO262-3
Infineon Technologies

SPI15N65C3XKSA1

ZVN4306GTA - MOSFET N-Chnl 60V
Diodes Incorporated

ZVN4306GTA

FCH099N60E - Trans MOSFET N-CH 600V 37A 3-Pin TO-247 Tube
ON Semiconductor

FCH099N60E

AUIRF1404STRL - MOSFET N-CH 40V 202A D2PAK
Infineon Technologies

AUIRF1404STRL

DMN63D8LW-13 - MOSFET N-CH 30V 0.38A SOT323
Diodes Incorporated

DMN63D8LW-13

STF45N65M5 - MOSFET (Metal Oxide) N-Channel Tube 78m Ω @ 19.5A, 10V ±25V 3375pF @ 100V 91nC @ 10V TO-220-3 Full Pack
STMicroelectronics

STF45N65M5

IXFN38N100P - MOSFET (Metal Oxide) N-Channel Tube 210m Ω @ 19A, 10V ±30V 24000pF @ 25V 350nC @ 10V 1000V SOT-227-4, miniBLOC
IXYS

IXFN38N100P

TK7A45DA(STA4,Q,M) - MOSFET N-CH 450V 6.5A TO-220SIS
Toshiba Semiconductor and Storage

TK7A45DA(STA4,Q,M)

TK11A50D(STA4,Q,M) - MOSFET N-CH 500V 11A TO-220SIS
Toshiba Semiconductor and Storage

TK11A50D(STA4,Q,M)

STF18N60M6 - MOSFET (Metal Oxide) N-Channel 280m Ω @ 6.5A, 10V ±25V 650pF @ 100V 16.8nC @ 10V 600V TO-220-3 Full Pack
STMicroelectronics

STF18N60M6

View All Related Products

Get Subscriber

Enter Your Email Address, Get the Latest News