FQP30N06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP30N06L Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
35mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
32A
Number of Elements
1
Power Dissipation-Max
79W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
79W
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
35m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1040pF @ 25V
Current - Continuous Drain (Id) @ 25°C
32A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
210ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
110 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
32A
Threshold Voltage
2.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Nominal Vgs
2.5 V
Height
16.3mm
Length
10.67mm
Width
4.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3245 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.46000
$1.46
10
$1.29600
$12.96
100
$1.03150
$103.15
500
$0.80748
$403.74
FQP30N06L Product Details
FQP30N06L Desription
FQP30N06L is a logic level Mosfet and an N-Channel enhancement mode power field effect transistor. That is, it can be turned on completely by using a microcontroller's logic level (3.3V OR 5V). The FQP30N06L is widely used because of its low on-state resistance, superior switching performance, and ability to endure high energy pulses in avalanche and commutation modes. At 25 degrees Celsius, the FQP30N06L Mosfet has voltage, current, and power dissipation ratings of 60 V, 32 A, and 79 watts, respectively. At a maximum Gate threshold voltage of 10 V, it has a low Drain to source resistance (RDS(ON)) of 0.035 ohms.
FQP30N06L Features
Low on resistance: 35mΩ maximum Gate threshold voltage: 10V Low RSS capacitance: 50pF typical Junction temeprature maximum rate: 175°C 100% avalanche tested
FQP30N06L Applications
Arduino projects DC Motor control Swithcing power appliances Audio amplifiers Power supplies Telecom
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