Name: FDMC510P
Brand: ON Semiconductor
SKU: FDMC510P
Price: 1.97000 USD
Availability: InStock

new-10%

FDMC510P

Manufacturer part number:FDMC510P

Manufacturer:ON Semiconductor

Description:FDMC510P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC510P Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	165.33333mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.3W Ta 41W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	41W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7860pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs	116nC @ 4.5V
Rise Time	34ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	338 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	-500mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	54A
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	37 mJ
Height	750μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

FDMC510P Product Details

FDMC510P Description

FDMC510P P-Channel MOSFET provides the most efficient RDS(on) together with an optimized BVDSS capability. FDMC510P MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDMC510P ON Semiconductor is a general-purpose device and can be used in Battery Management and Control switches.