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BUK9629-100B,118

BUK9629-100B,118

BUK9629-100B,118

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 27m Ω @ 25A, 10V ±15V 4360pF @ 25V 33nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

BUK9629-100B,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2011
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureLOGIC LEVEL COMPATIBLE
HTS Code8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 157W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation157W
Case Connection DRAIN
Turn On Delay Time30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Rise Time86ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 186A
Avalanche Energy Rating (Eas) 152 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4915 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.431049$1.431049
10$1.350046$13.50046
100$1.273629$127.3629
500$1.201536$600.768
1000$1.133525$1133.525

BUK9629-100B,118 Product Details

BUK9629-100B,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 152 mJ.A device's maximum input capacitance is 4360pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 46A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 96 ns.Its maximum pulsed drain current is 186A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.Powered by 100V, it supports maximum dual supply voltages.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

BUK9629-100B,118 Features


the avalanche energy rating (Eas) is 152 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 186A.


BUK9629-100B,118 Applications


There are a lot of Nexperia USA Inc.
BUK9629-100B,118 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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