FQD7N30TF Description
Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.
FQD7N30TF Features
? 5.5 A, 300 V, RDS (on), 700 m (max. ), @ 10 V, ID, 2.75 A
? Minimal Gate Fee (Typ. 13 nC)
? Low Crash (Typ. 12 pF)
? Avalanche tested in full
FQD7N30TF Applications
Switching applications
