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FQD5P20TM

FQD5P20TM

FQD5P20TM

ON Semiconductor

FQD5P20TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQD5P20TM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.4Ohm
Subcategory Other Transistors
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Current Rating-3.7A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 45W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Case Connection DRAIN
Turn On Delay Time9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.85A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.7A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time70ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -200V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7663 items

Pricing & Ordering

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FQD5P20TM Product Details

FQD5P20TM Description


This P-channel enhanced mode power MOSFET is produced using Fairchild's proprietary planar beam and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies. Application of Audio Amplifier DC Motor Control and variable switching Power supply.

FQD5P20TM is a P-channel enhanced mode power MOSFET which is produced using Fairchild's proprietary planar beam and DMOS technology.

FQD5P20TM Features

· -3.7 A, -200 V,RDs(on) = 1.4 Ω (Max.)@ VGs = -10 V,1, =-1.85 A
·Low Gate Charge(Typ.10nC)
· Low Crss( Typ.12 pF)100% Avalanche Tested
· RoHS Compliant

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