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FQD1N80TF

FQD1N80TF

FQD1N80TF

ON Semiconductor

MOSFET N-CH 800V 1A DPAK

SOT-23

FQD1N80TF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:3583 items

About FQD1N80TF

The FQD1N80TF from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 800V 1A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQD1N80TF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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