IRL3705Z Description
The IRL3705Z is a HEXFET? N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of the IRL3705Z are a 175??C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRL3705Z Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175??C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRL3705Z Applications