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FQB27N25TM_AM002

FQB27N25TM_AM002

FQB27N25TM_AM002

ON Semiconductor

MOSFET N-CH 250V 25.5A D2PAK

SOT-23

FQB27N25TM_AM002 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 180W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25.5A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:1902 items

About FQB27N25TM_AM002

The FQB27N25TM_AM002 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 250V 25.5A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQB27N25TM_AM002, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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