Name: STF21NM60N
Brand: STMicroelectronics
SKU: STF21NM60N
Availability: InStock

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STF21NM60N

Manufacturer part number:STF21NM60N

Manufacturer:STMicroelectronics

Description:STF21NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STF21NM60N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	17A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STF21
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 50V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	84 ns
Continuous Drain Current (ID)	17A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.22Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	68A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STF21NM60N Product Details

STF21NM60N Description

STF21NM60N is a 600v N-channel second-generation MDmesh? Power MOSFET. This series of devices implement the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. The STF21NM60N is, therefore, suitable for the most demanding high-efficiency converters.