Name: FQA46N15
Brand: ON Semiconductor
SKU: FQA46N15
Price: 3.94000 USD
Availability: InStock

new-10%

FQA46N15

Manufacturer part number:FQA46N15

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 42m Ω @ 25A, 10V ±25V 3250pF @ 25V 110nC @ 10V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:FQA46N15 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 hours ago)
Factory Lead Time	5 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	QFET®
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	42MOhm
Additional Feature	FAST SWITCHING
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Current Rating	50A
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	42m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	320ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	200 ns
Turn-Off Delay Time	210 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	650 mJ
Height	20.1mm
Length	15.8mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FQA46N15 Product Details

FQA46N15 Description

The FQA7N80 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.