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TP65H035WS

TP65H035WS

TP65H035WS

Transphorm

GANFET N-CH 650V 46.5A TO247-3

SOT-23

TP65H035WS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology GaNFET (Cascode Gallium Nitride FET)
Power Dissipation-Max 156W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 41m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V
Current - Continuous Drain (Id) @ 25°C 46.5A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 12V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:328 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$17.145000$17.145
10$16.174528$161.74528
100$15.258989$1525.8989
500$14.395273$7197.6365
1000$13.580446$13580.446

About TP65H035WS

The TP65H035WS from Transphorm is a high-performance microcontroller designed for a wide range of embedded applications. This component features GANFET N-CH 650V 46.5A TO247-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TP65H035WS, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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