FQA38N30 Description
These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.
FQA38N30 Features
38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
Low Gate Charge (Typ. 90 nC)
Low Crss (Typ. 70 pF)
100% Avalanche Tested
RoHS compliant
FQA38N30 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
