FQA28N50 Description
These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver excellent switchingperformance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.
FQA28N50 Features
28.4 A, 500 V, RDS(on) = 160 m|? (Max.) @ VGS = 10 V, ID = 14.2 A
Low Gate Charge (Typ. 110 nC)
Low Crss (Typ. 60 pF)
100% Avalanche Tested
RoHS compliant
FQA28N50 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
