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IRF6619TRPBF

IRF6619TRPBF

IRF6619TRPBF

Infineon Technologies

MOSFET N-CH 20V 30A DIRECTFET

SOT-23

IRF6619TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating30A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation89W
Case Connection DRAIN
Turn On Delay Time21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5040pF @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Rise Time71ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.3 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 240 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3592 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.726318$0.726318
10$0.685206$6.85206
100$0.646421$64.6421
500$0.609831$304.9155
1000$0.575312$575.312

About IRF6619TRPBF

The IRF6619TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 20V 30A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6619TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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