Description
The FQA24N50F is a 500V N-Channel MOSFET. The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices work well in basic full-bridge topologies, phase-shift ZVS, and high-efficiency switch mode power supplies that utilize the body diode.
Features
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode ( max, 250ns )
24A, 500V, RDS(on) = 0.2? @VGS = 10 V
Low gate charge ( typical 90 nC)
Low Crss ( typical 55 pF)
Applications
