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PHP176NQ04T,127

PHP176NQ04T,127

PHP176NQ04T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 4.3m Ω @ 25A, 10V ±20V 3620pF @ 25V 68.9nC @ 10V 40V TO-220-3

SOT-23

PHP176NQ04T,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series TrenchMOS™
Published 2009
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 68.9nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0043Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 560 mJ
RoHS StatusROHS3 Compliant
In-Stock:4898 items

PHP176NQ04T,127 Product Details

PHP176NQ04T,127 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 560 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3620pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 240A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

PHP176NQ04T,127 Features


the avalanche energy rating (Eas) is 560 mJ
based on its rated peak drain current 240A.
a 40V drain to source voltage (Vdss)


PHP176NQ04T,127 Applications


There are a lot of NXP USA Inc.
PHP176NQ04T,127 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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