FQA12P20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQA12P20 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-200V
Technology
MOSFET (Metal Oxide)
Current Rating
-12.6A
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Power Dissipation
150W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
470mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12.6A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
195ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
12.6A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
-200V
Input Capacitance
1.2nF
Drain to Source Resistance
470mOhm
Rds On Max
470 mΩ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:1550 items
FQA12P20 Product Details
FQA12P20 Description
The FQA12P20 P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
