STW25NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW25NM60ND Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
160mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW25N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
60 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 50V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
21A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
84A
Avalanche Energy Rating (Eas)
850 mJ
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4615 items
STW25NM60ND Product Details
STW25NM60ND Description
The STW25NM60ND is a 600 V, 0.13 A, 21 A N-channel FDmeshTM II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220, and TO-247 packages. The second generation of MDmeshTM technology is used to make these FDmeshTM II Power MOSFETs with an intrinsic fast-recovery body diode. These breakthrough devices have extremely low on-resistance and improved switching performance thanks to an unique strip-layout vertical construction. They're perfect for ZVS phase-shift converters and bridge topologies.
STW25NM60ND Features
■ The worldwide best RDS(on)*area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
STW25NM60ND Applications
■ Switching applications
■ Switch Mode Power Supplies (SMPS)
■ Residential, commercial, architectural and street lighting.
■ DC-DC converters
■ Motor control
■ Automotive applications
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