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FJA4213RTU

FJA4213RTU

FJA4213RTU

ON Semiconductor

FJA4213RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJA4213RTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Subcategory Other Transistors
Voltage - Rated DC -230V
Max Power Dissipation130W
Peak Reflow Temperature (Cel) 260
Current Rating-15A
Frequency 30MHz
Number of Elements 1
Element ConfigurationSingle
Power Dissipation130W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage250V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage-400mV
Collector Base Voltage (VCBO) -250V
Emitter Base Voltage (VEBO) -5V
hFE Min 55
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2577 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.857328$0.857328
10$0.808800$8.088
100$0.763019$76.3019
500$0.719829$359.9145
1000$0.679084$679.084

FJA4213RTU Product Details

FJA4213RTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 55 @ 1A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 800mA, 8A.The emitter base voltage can be kept at -5V for high efficiency.Its current rating is -15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.30MHz is present in the transition frequency.Maximum collector currents can be below 17A volts.

FJA4213RTU Features


the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -15A
a transition frequency of 30MHz

FJA4213RTU Applications


There are a lot of ON Semiconductor FJA4213RTU applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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