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FGY75T95SQDT

FGY75T95SQDT

FGY75T95SQDT

ON Semiconductor

FGY75T95SQDT datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGY75T95SQDT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Operating Temperature-55°C~175°C TJ
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Power - Max 434W
Reverse Recovery Time 259ns
Voltage - Collector Emitter Breakdown (Max) 950V
Current - Collector (Ic) (Max) 150A
Test Condition 600V, 75A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.11V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge137nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 28.8ns/117ns
Switching Energy 8.8mJ (on), 3.2mJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:967 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.52000$9.52
500$9.4248$4712.4
1000$9.3296$9329.6
1500$9.2344$13851.6
2000$9.1392$18278.4
2500$9.044$22610

FGY75T95SQDT Product Details

FGY75T95SQDT Description

FGY75T95SQDT transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGY75T95SQDT MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FGY75T95SQDT Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FGY75T95SQDT Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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