AIGW50N65F5XKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
AIGW50N65F5XKSA1 Features
HighspeedF5technologyoffering:
?Best-in-Classefficiencyinhardswitchingandresonant
topologies
?650Vbreakdownvoltage
?LowgatechargeQG
?Maximumjunctiontemperature175°C
?Dynamicallystresstested
?QualifiedaccordingtoAEC-Q101
?Greenpackage(RoHScompliant)
?CompleteproductspectrumandPSpiceModels:
AIGW50N65F5XKSA1 Applications
?Off-boardcharger
?On-boardcharger
?DC/DCconverter
?Power-factorcorrection
