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FGH75T65SQDT_F155

FGH75T65SQDT_F155

FGH75T65SQDT_F155

ON Semiconductor

FGH75T65SQDT_F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH75T65SQDT_F155 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature-55°C~175°C TJ
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 375W
Reverse Recovery Time 76ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 150A
Test Condition 400V, 18.8A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge128nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 23ns/120ns
Switching Energy 300μJ (on), 70μJ (off)
RoHS StatusROHS3 Compliant
In-Stock:1611 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.891000$5.891
10$5.557547$55.57547
100$5.242969$524.2969
500$4.946197$2473.0985
1000$4.666224$4666.224

FGH75T65SQDT_F155 Product Details

FGH75T65SQDT_F155 Description

Using novel field stop IGBT technology, ON Semiconductor’s newseries of field stop 4th generation IGBTs offer the optimumperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.

FGH75T65SQDT_F155 Features

? Max Junction Temperature TJ = 175°C

? Positive Temperature Co?efficient for Easy Parallel Operating

? High Current Capability

? Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A

? 100% of the Parts Tested for ILM

? High Input Impedance

? Fast Switching

? Tighten Parameter Distribution

? This Device is Pb?Free and is RoHS Compliant


FGH75T65SQDT_F155 Applications

? Solar Inverter, UPS, Welder, Telecom, ESS, PFC


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