SIGC18T60UNX1SA2 Description
SIGC18T60UNX1SA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC18T60UNX1SA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
SIGC18T60UNX1SA2 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC18T60UNX1SA2 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
