Name: FGH60N60SMD
Brand: ON Semiconductor
SKU: FGH60N60SMD
Price: 5.79000 USD
Availability: InStock

new-10%

FGH60N60SMD

Manufacturer part number:FGH60N60SMD

Manufacturer:ON Semiconductor

Description:FGH60N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH60N60SMD Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	600W
Base Part Number	FGH60N60
Number of Elements	1
Rise Time-Max	70ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	27 ns
Power - Max	600W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	146 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	120A
Reverse Recovery Time	39 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	59 ns
Test Condition	400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 60A
Turn Off Time-Nom (toff)	163 ns
IGBT Type	Field Stop
Gate Charge	189nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	18ns/104ns
Switching Energy	1.26mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	68ns
Height	20.6mm
Length	15.6mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FGH60N60SMD Product Details

FGH60N60SMDFeatures

Maximum junction temperature : TJ =175 °C

Positive temperaure co-efficient for easy parallel operating

High current capability

Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A

High input impedance

Fast switching: EOFF =7.5uJ/A

Tightened parameter distribution

RoHS compliant

FGH60N60SMDApplications

Uninterruptible Power Supply

Energy Generation & Distribution

Other Industrial

FGH60N60SMD Description

FGH60N60SMD On Semiconductor's new series of second-generation field-stop IGBT uses the new field-stop IGBT technology, which provides the best performance for solar inverter, UPS, welder, telecom, ESS and PFC applications, which are essential for low conduction and switching loss.