IKW75N65EL5XKSA1 Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
IKW75N65EL5XKSA1 Features
Very low collector-emitter saturation voltage VcEsHI
Best-in-Class tradeoff between conduction and switching losses
650V breakdown voltage
Low gate charge Qa
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating
RoHS compliant
IKW75N65EL5XKSA1 Applications
Uninterruptible power supplies
Solar photovoltaic inverters
Welding machines
