Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDZ197PZ

FDZ197PZ

FDZ197PZ

ON Semiconductor

FDZ197PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDZ197PZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, WLCSP
Number of Pins 6
Weight 54mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal FormBALL
Number of Elements 1
Power Dissipation-Max 1.9W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.9W
Turn On Delay Time5.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 64m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time5.9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 280 ns
Turn-Off Delay Time 311 ns
Continuous Drain Current (ID) -3.8A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -500 mV
Feedback Cap-Max (Crss) 225 pF
Height 650μm
Length 1mm
Width 1.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:32324 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.23000$0.23
500$0.2277$113.85
1000$0.2254$225.4
1500$0.2231$334.65
2000$0.2208$441.6
2500$0.2185$546.25

FDZ197PZ Product Details

FDZ197PZ Description


The FDZ197PZ lowers both PCB space and rDS by combining an innovative 1.5 V PowerTrench? technique with a state-of-the-art "fine pitch" WLCSP packaging process (on). This sophisticated WLCSP MOSFET represents a technological breakthrough in packaging, allowing it to combine superior thermal transfer properties, ultra-low profile packing, low gate charge, and low rDS (on).



FDZ197PZ Features


  • Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A

  • Max rDS(on) = 71 mmΩ at VGS = -2.5 V, ID= -2.0 A

  • Max rDS(on) = 79 mmΩ at VGS = -1.8 V, ID = -1.0 A

  • Max rDS(on) = 95 mmΩ at VGS = -1.5 V, ID = -1.0 A

  • Occupies only 1.5 mm2 of PCB area. Less than 50% of thearea of 2 x 2 BGA

  • Ultra-thin package: less than 0.65 mm height when mountedto PCB

  • HBM ESD protection level > 4.4 kV (Note 3)

  • RoHS Compliant



FDZ197PZ Applications


  • This product is general usage and suitable for many different applications.

  • Battery Management

  • Load Switch

  • Battery Protection


Get Subscriber

Enter Your Email Address, Get the Latest News